Field-induced dissociation
Abstract
A method is developed for deducing the electron affinity of disordered organic semiconductors from spectroscopic thin-film studies of the ionization energy and the optical gap energy, combined with field-induced dissociation (FID) device experiments that are analyzed with Kinetic Monte Carlo simulations using a methodology that has been presented by E.J. de Jong et al. (Phys. Rev, B, xx, yy (20zz)). The FID experiments are carried out for a set of eight organic semiconductor materials that are often used in organic light-emitting diodes (OLEDs). The analysis is focused on the and -isomers of the blue fluorescent emitter material 2-methyl-9,10-di-naphthyl-anthracene (MADN). For these two materials, the experimental ionization energy, the optical gap energy, the exciton binding energy and the electron affinity, are shown to be consistent with the results of quantum-chemical calculations, presented by G. Tirimbo et al. (Phys. Rev, B, xx, yy (20zz)). The FID experiments reveal for all fluorescent emitter materials studied an exciton binding energy of approximately 1.0-1.2 eV, whereas for a thermally-activated delayed fluorescence material a slightly smaller value is obtained.
This work has been accepted in Physical Review B
"Electron affinity and binding energy of excitons in disordered organic semiconductors. III. Multimethod study for films of the blue fluorescent emitter MADN"
(Phys. Rev. B n/a, accepted (2025).)